1. Absorption of light in silicon![]() This is for room temperature, where the bandgap is at 1103 nm (1.125 eV). At -110 C the bandgap is at 1075 nm (1.154 eV). Full size postscript version, (48616 bytes) |
2. Transverse diffusion (related to MTF)![]() Full size postscript version, (1.25 Mbytes) |
![]() Full size postscript
version, (48616 bytes)
|
![]() The gate structure is conventional, as are the buried channel and oxide layer. An epitaxial layer is not necessary. Since n-type material is used, there is no harmful effect from electron accumulation at the rear surface. However, it is necessary to leave about 10 nm of doped polysilicon on the rear surface to maintain low leakage. Full size postscript
version, (48 616 bytes)
|
![]() The solid curve is the LBL/Lick QE as measured on an equivalent photodiode using a monochromater at LBL. The dots are nominally the same measurement, taken with a prototype CCD using narrow bandpass filters at Lick. The difference is not understood. The thickness of the single AR coating was chosen for maximal transmission at 400 nm. Future windows, with an additional quartz coating, should provide substantially better QE in the 1000 nm region. Full size postscript
version, (81 846 bytes)
|
1-Oct-1997